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IS42S32400F IS45S32400F Integrated Silicon Solution Inc
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IS42S32400F IS45S32400F,DEVICE OVERVIEW, The 128Mb SDRAM is a high speed CMOS dynamic A self timed row precharge initiated at the end of the burst. random access memory designed to operate in 3 3V Vdd sequence is available with the AUTO PRECHARGE function. and 3 3V Vddq memory systems containing 134 217 728 enabled Precharge one bank while accessing one of the. bits Internally configured as a quad bank DRAM with a other three banks will hide the precharge cycles and provide. synchronous interface Each 33 554 432 bit bank is orga seamless high speed random access operation. nized as 4 096 rows by 256 columns by 32 bits SDRAM read and write accesses are burst oriented starting. The 128Mb SDRAM includes an AUTO REFRESH MODE at a selected location and continuing for a programmed. and a power saving power down mode All signals are number of locations in a programmed sequence The. registered on the positive edge of the clock signal CLK registration of an ACTIVE command begins accesses. All inputs and outputs are LVTTL compatible followed by a READ or WRITE command The ACTIVE. The 128Mb SDRAM has the ability to synchronously burst command in conjunction with address bits registered are. data at a high data rate with automatic column address used to select the bank and row to be accessed BA0. generation the ability to interleave between internal banks BA1 select the bank A0 A11 select the row The READ. to hide precharge time and the capability to randomly or WRITE commands in conjunction with address bits. change column addresses on each clock cycle during registered are used to select the starting column location. burst access for the burst access, Programmable READ or WRITE burst lengths consist of. 1 2 4 and 8 locations or full page with a burst terminate. FUNCTIONAL BLOCK DIAGRAM For 1MX32X4 Banks,CLK DQM0 DQM3. CS COMMAND DATA IN,RAS DECODER BUFFER,WE CLOCK REFRESH. GENERATOR MODE DQ 0 31,CONTROLLER,12 SELF VDD VDDQ.
A10 BUFFER Vss VssQ,CONTROLLER 32 32,A7 REFRESH,A6 COUNTER. ROW DECODER,A2 4096 MEMORY CELL,MULTIPLEXER,A1 4096 ARRAY. BA0 ROW ROW BANK 0,BA1 ADDRESS ADDRESS,LATCH BUFFER. 12 SENSE AMP I O GATE,ADDRESS LATCH BANK CONTROL LOGIC. BURST COUNTER,COLUMN DECODER,ADDRESS BUFFER,2 Integrated Silicon Solution Inc www issi com.
10 28 2015,IS42S32400F IS45S32400F,PIN CONFIGURATIONS. 86 pin TSOP Type II for x32,VDD 1 86 VSS,DQ0 2 85 DQ15. VDDQ 3 84 VSSQ,DQ1 4 83 DQ14,DQ2 5 82 DQ13,VSSQ 6 81 VDDQ. DQ3 7 80 DQ12,DQ4 8 79 DQ11,VDDQ 9 78 VSSQ,DQ5 10 77 DQ10. DQ6 11 76 DQ9,VSSQ 12 75 VDDQ,DQ7 13 74 DQ8,NC 14 73 NC.
VDD 15 72 VSS,DQM0 16 71 DQM1,WE 17 70 NC,CAS 18 69 NC. RAS 19 68 CLK,CS 20 67 CKE,A11 21 66 A9,BA0 22 65 A8. BA1 23 64 A7,A10 24 63 A6,A0 25 62 A5,A1 26 61 A4,A2 27 60 A3. DQM2 28 59 DQM3,VDD 29 58 VSS,NC 30 57 NC,DQ16 31 56 DQ31. VSSQ 32 55 VDDQ,DQ17 33 54 DQ30,DQ18 34 53 DQ29,VDDQ 35 52 VSSQ.
DQ19 36 51 DQ28,DQ20 37 50 DQ27,VSSQ 38 49 VDDQ,DQ21 39 48 DQ26. DQ22 40 47 DQ25,VDDQ 41 46 VSSQ,DQ23 42 45 DQ24,VDD 43 44 VSS. PIN DESCRIPTIONS,A0 A11 Row Address Input WE Write Enable. A0 A7 Column Address Input DQM0 DQM3 x32 Input Output Mask. BA0 BA1 Bank Select Address Vdd Power,DQ0 to DQ31 Data I O Vss Ground. CLK System Clock Input Vddq Power Supply for I O Pin. CKE Clock Enable Vssq Ground for I O Pin,CS Chip Select NC No Connection.
RAS Row Address Strobe Command,CAS Column Address Strobe Command. Integrated Silicon Solution Inc www issi com 3,10 28 2015. IS42S32400F IS45S32400F,PIN CONFIGURATION, package code B 90 bALL Tf bga Top View 8 00 mm x 13 00 mm Body 0 8 mm Ball Pitch. 1 2 3 4 5 6 7 8 9,DQ26 DQ24 VSS VDD DQ23 DQ21,DQ28 VDDQ VSSQ VDDQ VSSQ DQ19. VSSQ DQ27 DQ25 DQ22 DQ20 VDDQ,VSSQ DQ29 DQ30 DQ17 DQ18 VDDQ.
VDDQ DQ31 NC NC DQ16 VSSQ,VSS DQM3 A3 A2 DQM2 VDD,A4 A5 A6 A10 A0 A1. A7 A8 NC NC BA1 A11,CLK CKE A9 BA0 CS RAS,DQM1 NC NC CAS WE DQM0. VDDQ DQ8 VSS VDD DQ7 VSSQ,VSSQ DQ10 DQ9 DQ6 DQ5 VDDQ. VSSQ DQ12 DQ14 DQ1 DQ3 VDDQ,DQ11 VDDQ VSSQ VDDQ VSSQ DQ4. DQ13 DQ15 VSS VDD DQ0 DQ2,PIN DESCRIPTIONS,A0 A11 Row Address Input WE Write Enable.
A0 A7 Column Address Input DQM0 DQM3 x32 Input Output Mask. BA0 BA1 Bank Select Address Vdd Power,DQ0 to DQ31 Data I O Vss Ground. CLK System Clock Input Vddq Power Supply for I O Pin. CKE Clock Enable Vssq Ground for I O Pin,CS Chip Select NC No Connection. RAS Row Address Strobe Command,CAS Column Address Strobe Command. 4 Integrated Silicon Solution Inc www issi com,10 28 2015. IS42S32400F IS45S32400F,PIN FUNCTIONS,Symbol Type Function In Detail.
A0 A11 Input Pin Address Inputs A0 A11 are sampled during the ACTIVE. command row address A0 A11 and READ WRITE command column address. A0 A7 with A10 defining auto precharge to select one location out of the memory. array in the respective bank A10 is sampled during a PRECHARGE command to. determine if all banks are to be precharged A10 HIGH or bank selected by. BA0 BA1 LOW The address inputs also provide the op code during a LOAD. MODE REGISTER command, BA0 BA1 Input Pin Bank Select Address BA0 and BA1 defines which bank the ACTIVE READ WRITE. or PRECHARGE command is being applied, CAS Input Pin CAS in conjunction with the RAS and WE forms the device command See the. Command Truth Table for details on device commands. CKE Input Pin The CKE input determines whether the CLK input is enabled The next rising edge. of the CLK signal will be valid when is CKE HIGH and invalid when LOW When CKE. is LOW the device will be in either power down mode clock suspend mode or self. refresh mode CKE is an asynchronous input, CLK Input Pin CLK is the master clock input for this device Except for CKE all inputs to this device. are acquired in synchronization with the rising edge of this pin. CS Input Pin The CS input determines whether command input is enabled within the device. Command input is enabled when CS is LOW and disabled with CS is HIGH The. device remains in the previous state when CS is HIGH. D Input Pin DQM0 DQM3 control the four bytes of the I O buffers DQ0 DQ31 In read. mode DQMn control the output buffer When DQMn is LOW the corresponding buf. fer byte is enabled and when HIGH disabled The outputs go to the HIGH imped. ance state whenDQMn is HIGH This function corresponds to OE in conventional. DRAMs In write mode DQMn control the input buffer When DQMn is LOW the. corresponding buffer byte is enabled and data can be written to the device When. DQMn is HIGH input data is masked and cannot be written to the device. DQ0 DQ31 Input Output Pin Data on the Data Bus is latched on these pins during Write commands and buffered after. Read commands, RAS Input Pin RAS in conjunction with CAS and WE forms the device command See the Com. mand Truth Table item for details on device commands. WE Input Pin WE in conjunction with RAS and CAS forms the device command See the Com. mand Truth Table item for details on device commands. Vddq ower Supply Pin,P Vddq is the output buffer power supply.
Vdd Power Supply Pin Vdd is the device internal power supply. Vssq Power Supply Pin Vssq is the output buffer ground. Vss Power Supply Pin Vss is the device internal ground. Integrated Silicon Solution Inc www issi com 5,10 28 2015. IS42S32400F IS45S32400F,GENERAL DESCRIPTION, The READ command selects the bank from BA0 BA1 inputs PRECHARGE function in conjunction with a specific READ. and starts a burst read access to an active row Inputs or WRITE command For each individual READ or WRITE. A0 A7 provides the starting column location When A10 is command auto precharge is either enabled or disabled. HIGH this command functions as an AUTO PRECHARGE AUTO PRECHARGE does not apply except in full page. command When the auto precharge is selected the row burst mode Upon completion of the READ or WRITE. being accessed will be precharged at the end of the READ burst a precharge of the bank row that is addressed is. burst The row will remain open for subsequent accesses automatically performed. when AUTO PRECHARGE is not selected DQ s read, data is subject to the logic level on the DQM inputs two AUTO REFRESH COMMAND. clocks earlier When a given DQM signal was registered This command executes the AUTO REFRESH operation. HIGH the corresponding DQ s will be High Z two clocks The row address and bank to be refreshed are automatically. later DQ s will provide valid data when the DQM signal generated during this operation The stipulated period trc is. was registered LOW required for a single refresh operation and no other com. mands can be executed during this period This command. WRITE is executed at least 4096 times for every Tref During an. A burst write access to an active row is initiated with the AUTO REFRESH command address bits are Don t Care. WRITE command BA0 BA1 inputs selects the bank This command corresponds to CBR Auto refresh. and the starting column location is provided by inputs. A0 A7 Whether or not AUTO PRECHARGE is used is BURST TERMINATE. determined by A10 The BURST TERMINATE command forcibly terminates. The row being accessed will be precharged at the end of the burst read and write operations by truncating either. the WRITE burst if AUTO PRECHARGE is selected If fixed length or full page bursts and the most recently. AUTO PRECHARGE is not selected the row will remain registered READ or WRITE command prior to the BURST. open for subsequent accesses TERMINATE, A memory array is written with corresponding input data COMMAND INHIBIT. on DQ s and DQM input logic level appearing at the same. COMMAND INHIBIT prevents new commands from being, time Data will be written to memory when DQM signal is.
executed Operations in progress are not affected apart. LOW When DQM is HIGH the corresponding data inputs. from whether the CLK signal is enabled, will be ignored and a WRITE will not be executed to that. byte column location NO OPERATION, PRECHARGE When CS is low the NOP command prevents unwanted. commands from being registered during idle or wait. The PRECHARGE command is used to deactivate the, open row in a particular bank or the open row in all banks. BA0 BA1 can be used to select which bank is precharged LOAD MODE REGISTER. or they are treated as Don t Care A10 determined During the LOAD MODE REGISTER command the mode. whether one or all banks are precharged After execut register is loaded from A0 A11 This command can only. ing this command the next command for the selected be issued when all banks are idle. bank s is executed after passage of the period tRP which. is the period required for bank precharging Once a bank ACTIVE COMMAND. has been precharged it is in the idle state and must be When the ACTIVE COMMAND is activated BA0 BA1. activated prior to any READ or WRITE commands being inputs selects a bank to be accessed and the address. issued to that bank inputs on A0 A11 selects the row Until a PRECHARGE. AUTO PRECHARGE command is issued to the bank the row remains open. for accesses,The AUTO PRECHARGE function ensures that the pre. charge is initiated at the earliest valid stage within a burst. This function allows for individual bank precharge without. requiring an explicit command A10 to enable the AUTO. 6 Integrated Silicon Solution Inc www issi com,10 28 2015.
IS42S32400F IS45S32400F,COMMAND TRUTH TABLE,Function n 1 n CS RAS CAS WE BA1 BA0 A10 A9 A0. Device deselect DESL H H,No operation NOP H L H H H. Burst stop BST H L H H L,Read H L H L H V V L V,Read with auto precharge H L H L H V V H V. Write H L H L L V V L V,Write with auto precharge H L H L L V V H V. Bank activate ACT H L L H H V V V V,Precharge select bank PRE H L L H L V V L.
Precharge all banks PALL H L L H L H,CBR Auto Refresh REF H H L L L H. Self Refresh SELF H L L L L H,Mode register set MRS H L L L L L L L V. Note H Vih L Vil x Vih or Vil V Valid Data,DQM TRUTH TABLE. Function n 1 n U L,Data write output enable H L L,Data mask output disable H H H. Upper byte write enable output enable H L,Lower byte write enable output enable H L.
Upper byte write inhibit output disable H H,Lower byte write inhibit output disable H H. Note H Vih L Vil x Vih or Vil V Valid Data,Integrated Silicon Solution Inc www issi com 7. 10 28 2015,IS42S32400F IS45S32400F,CKE TRUTH TABLE. Current State Function n 1 n CS RAS CAS WE Address. Activating Clock suspend mode entry H L,Any Clock suspend mode L L. Clock suspend mode exit L H,Auto refresh command Idle REF H H L L L H.
Self refresh entry Idle SELF H L L L L H,Power down entry Idle H L. Self refresh exit L H L H H H,Power down exit L H,Note H Vih L Vil x Vih or Vil V Valid Data. 8 Integrated Silicon Solution Inc www issi com,10 28 2015. IS42S32400F IS45S32400F,FUNCTIONAL TRUTH TABLE, Current State CS RAS CAS WE Address Command Action. Idle H X X X X DESL Nop or Power Down 2,L H H H X NOP Nop or Power Down 2.
L H H L X BST Nop or Power Down,L H L H BA CA A10 READ READA ILLEGAL 3. L H L L A CA A10 WRIT WRITA ILLEGAL 3,L L H H BA RA ACT Row activating. L L H L BA A10 PRE PALL Nop,L L L H X REF SELF Auto refresh or Self refresh 4. L L L L OC BA1 L MRS Mode register set,Row Active H X X X X DESL Nop. L H H H X NOP Nop,L H H L X BST Nop,L H L H BA CA A10 READ READA Begin read 5.
L H L L BA CA A10 WRIT WRITA Begin write 5,L L H H BA RA ACT ILLEGAL 3. L L H L BA A10 PRE PALL Precharge,Precharge all banks 6. L L L H X REF SELF ILLEGAL,L L L L OC BA MRS ILLEGAL. Read H X X X X DESL Continue burst to end to,Row active. L H H H X NOP Continue burst to end Row,Row active.
L H H L X BST Burst stop Row active,L H L H BA CA A10 READ READA Terminate burst. begin new read 7,L H L L BA CA A10 WRIT WRITA Terminate burst. begin write 7 8,L L H H BA RA ACT ILLEGAL 3,L L H L BA A10 PRE PALL Terminate burst. Precharging,L L L H X REF SELF ILLEGAL,L L L L OC BA MRS ILLEGAL. Write H X X X X DESL Continue burst to end,Write recovering.
L H H H X NOP Continue burst to end,Write recovering. L H H L X BST Burst stop Row active, L H L H BA CA A10 READ READA Terminate burst start read. Determine AP 7 8, L H L L BA CA A10 WRIT WRITA Terminate burst new write. Determine AP 7,L L H H BA RA RA ACT ILLEGAL 3, L L H L BA A10 PRE PALL Terminate burst Precharging 9. L L L H X REF SELF ILLEGAL,L L L L OC BA MRS ILLEGAL.
Note H Vih L Vil x Vih or Vil V Valid Data BA Bank Address CA Column Address RA Row Address OC Op Code. Integrated Silicon Solution Inc www issi com 9,10 28 2015. IS42S32400F IS45S32400F,FUNCTIONAL TRUTH TABLE Continued. Current State CS RAS CAS WE Address Command Action. Read with auto H DESL Continue burst to end Precharge. Precharging,L H H H x NOP Continue burst to end Precharge. L H H L BST ILLEGAL,L H L H BA CA A10 READ READA ILLEGAL 11. L H L L BA CA A10 WRIT WRITA ILLEGAL 11,L L H H BA RA ACT ILLEGAL 3.
L L H L BA A10 PRE PALL ILLEGAL 11,L L L H REF SELF ILLEGAL. L L L L OC BA MRS ILLEGAL, Write with Auto H DESL Continue burst to end Write. Precharge recovering with auto precharge,L H H H NOP Continue burst to end Write. recovering with auto precharge,L H H L BST ILLEGAL. L H L H BA CA A10 READ READA ILLEGAL 11,L H L L BA CA A10 WRIT WRITA ILLEGAL 11.
L L H H BA RA ACT ILLEGAL 3 11,L L H L BA A10 PRE PALL ILLEGAL 3 11. L L L H REF SELF ILLEGAL,L L L L OC BA MRS ILLEGAL. Precharging H DESL Nop Enter idle after tRP,L H H H NOP Nop Enter idle after tRP. L H H L BST Nop Enter idle after tRP,L H L H BA CA A10 READ READA ILLEGAL 3. L H L L BA CA A10 WRIT WRITA ILLEGAL 3,L L H H BA RA ACT ILLEGAL 3.
L L H L BA A10 PRE PALL Nop Enter idle after tRP,L L L H REF SELF ILLEGAL. L L L L OC BA MRS ILLEGAL, Row Activating H DESL Nop Enter bank active after tRCD. L H H H NOP Nop Enter bank active after tRCD,L H H L BST Nop Enter bank active after tRCD. L H L H BA CA A10 READ READA ILLEGAL 3,L H L L BA CA A10 WRIT WRITA ILLEGAL 3. L L H H BA RA ACT ILLEGAL 3 9,L L H L BA A10 PRE PALL ILLEGAL 3.
L L L H REF SELF ILLEGAL,L L L L OC BA MRS ILLEGAL. Note H Vih L Vil x Vih or Vil V Valid Data BA Bank Address CA Column Address RA Row Address OC Op Code. 10 Integrated Silicon Solution Inc www issi com,10 28 2015. IS42S32400F IS45S32400F,FUNCTIONAL TRUTH TABLE Continued. Current State CS RAS CAS WE Address Command Action. Write Recovering H DESL Nop Enter row active after tDPL. L H H H NOP Nop Enter row active after tDPL,L H H L BST Nop Enter row active after tDPL. L H L H BA CA A10 READ READA Begin read 8,L H L L BA CA A10 WRIT WRITA Begin new write.
L L H H BA RA ACT ILLEGAL 3,L L H L BA A10 PRE PALL ILLEGAL 3. L L L H REF SELF ILLEGAL,L L L L OC BA MRS ILLEGAL. Write Recovering H DESL Nop Enter precharge after tDPL. with Auto L H H H NOP Nop Enter precharge after tDPL. Precharge L H H L BST Nop Enter row active after tDPL. L H L H BA CA A10 READ READA ILLEGAL 3 8 11,L H L L BA CA A10 WRIT WRITA ILLEGAL 3 11. L L H H BA RA ACT ILLEGAL 3 11,L L H L BA A10 PRE PALL ILLEGAL 3 11. L L L H REF SELF ILLEGAL,L L L L OC BA MRS ILLEGAL.
Refresh H DESL Nop Enter idle after tRC,L H H NOP BST Nop Enter idle after tRC. L H L H BA CA A10 READ READA ILLEGAL,L H L L BA CA A10 WRIT WRITA ILLEGAL. L L H H BA RA ACT ILLEGAL,L L H L BA A10 PRE PALL ILLEGAL. L L L H REF SELF ILLEGAL,L L L L OC BA MRS ILLEGAL. Mode Register H DESL Nop Enter idle after 2 clocks. Accessing L H H H NOP Nop Enter idle after 2 clocks. L H H L BST ILLEGAL,L H L BA CA A10 READ WRITE ILLEGAL.
L L BA RA ACT PRE PALL ILLEGAL, Note H Vih L Vil x Vih or Vil V Valid Data BA Bank Address CA Column Address RA Row Address OC Op Code. 1 All entries assume that CKE is active CKEn 1 CKEn H. 2 If both banks are idle and CKE is inactive Low the device will enter Power Down mode All input buffers except CKE will be. 3 Illegal to bank in specified states Function may be legal in the bank indicated by Bank Address BA depending on the state of. 4 If both banks are idle and CKE is inactive Low the device will enter Self Refresh mode All input buffers except CKE will be. 5 Illegal if tRCD is not satisfied,6 Illegal if tRAS is not satisfied. 7 Must satisfy burst interrupt condition, 8 Must satisfy bus contention bus turn around and or write recovery requirements. 9 Must mask preceding data which don t satisfy tDPL. 10 Illegal if tRRD is not satisfied, 11 Illegal for single bank but legal for other banks. Integrated Silicon Solution Inc www issi com 11,10 28 2015.
IS42S32400F IS45S32400F,CKE RELATED COMMAND TRUTH TABLE 1. Current State Operation n 1 n CS RAS CAS WE Address. Self Refresh S R INVALID CLK n 1 would exit S R H X X X X X X. Self Refresh Recovery 2 L H H X X X X,Self Refresh Recovery 2 L H L H H X X. Illegal L H L H L X X,Illegal L H L L X X X,Maintain S R L L X X X X X. Self Refresh Recovery Idle After trc H H H X X X X. Idle After trc H H L H H X X,Illegal H H L H L X X. Illegal H H L L X X X,Begin clock suspend next cycle 5 H L H X X X X.
Begin clock suspend next cycle 5 H L L H H X X,Illegal H L L H L X X. Illegal H L L L X X X,Exit clock suspend next cycle 2 L H X X X X X. Maintain clock suspend L L X X X X X, Power Down P D INVALID CLK n 1 would exit P D H X X X X X. EXIT P D Idle 2 L H X X X X X,Maintain power down mode L L X X X X X. Both Banks Idle Refer to operations in Operative Command Table H H H X X X. Refer to operations in Operative Command Table H H L H X X. Refer to operations in Operative Command Table H H L L H X. Auto Refresh H H L L L H X, Refer to operations in Operative Command Table H H L L L L Op Code.
Refer to operations in Operative Command Table H L H X X X. Refer to operations in Operative Command Table H L L H X X. Refer to operations in Operative Command Table H L L L H X. Self Refresh 3 H L L L L H X, Refer to operations in Operative Command Table H L L L L L Op Code. Power Down 3 L X X X X X X, Any state Refer to operations in Operative Command Table H H X X X X X. other than Begin clock suspend next cycle 4 H L X X X X X. listed above Exit clock suspend next cycle L H X X X X X. Maintain clock suspend L L X X X X X, 1 H High level L low level X High or low level Don t care. 2 CKE Low to High transition will re enable CLK and other inputs asynchronously A minimum setup. time must be satisfied,before any command other than EXIT. 3 Power down and Self refresh can be entered only from the both banks idle state. 4 Must be legal command as defined in Operative Command Table. 5 Illegal if txsr is not satisfied,12 Integrated Silicon Solution Inc www issi com.
10 28 2015,IS42S32400F IS45S32400F,STATE DIAGRAM,Register REF CBR Auto. Set Refresh,CKE Active,Active CKE,Write Read,CKE Read CKE. WRITE READ,WRITE READ,SUSPEND SUSPEND,CKE Write CKE. CKE CKE READA,WRITEA READA,SUSPEND SUSPEND,Automatic sequence. Manual Input,Integrated Silicon Solution Inc www issi com 13.
10 28 2015,IS42S32400F IS45S32400F,ABSOLUTE MAXIMUM RATINGS 1. Symbol Parameters Rating Unit,Vdd max Maximum Supply Voltage 0 5 to 4 6 V. Vddq max Maximum Supply Voltage for Output Buffer 0 5 to 4 6 V. Vin Input Voltage 0 5 to Vdd 0 5 V,Vout Output Voltage 1 0 to Vddq 0 5 V. Pd max Allowable Power Dissipation 1 W,Ics Output Shorted Current 50 mA. Topr Operating Temperature Com 0 to 70 C,Ind 40 to 85.
A1 40 to 85,A2 40 to 105,Tstg Storage Temperature 65 to 150 C. 1 Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to. the device This is a stress rating only and functional operation of the device at these or any other conditions. above those indicated in the operational sections of this specification is not implied Exposure to absolute. maximum rating conditions for extended periods may affect reliability. 2 All voltages are referenced to Vss,DC RECOMMENDED OPERATING CONDITIONS. Ta 0oC to 70oC for Com grade Ta 40oC to 85oC for Ind and A1 grade Ta 40oC to 105oC for A2 grade. Symbol Parameter Min Typ Max Unit,Vdd Supply Voltage 3 0 3 3 3 6 V. Vddq I O Supply Voltage 3 0 3 3 3 6 V,Vih 1 Input High Voltage 2 0 Vddq 0 3 V. Vil 2 Input Low Voltage 0 3 0 8 V,1 Vih max Vddq 1 2V pulse width 3ns.
2 Vil min 1 2V pulse width 3ns,3 All voltages are referenced to Vss. CAPACITANCE CHARACTERISTICS At Ta 0 to 25 C Vdd Vddq 3 3 0 3V. Symbol Parameter Min Max Unit,Cin1 Input Capacitance CLK 2 4 pF. Cin2 Input Capacitance All other input pins 1 3 3 pF. Ci o Data Input Output Capacitance I Os 2 5 pF,THERMAL RESISTANCE. Package Substrate Theta ja Theta ja Theta ja Theta jc Units. Airflow 0m s Airflow 1m s Airflow 2m s,TSOP2 86 4 layer 88 1 77 3 72 3 15 3 C W. BGA 90 4 layer 38 1 33 1 31 3 5 7 C W,14 Integrated Silicon Solution Inc www issi com.
10 28 2015,IS42S32400F IS45S32400F, DC ELECTRICAL CHARACTERISTICS 1 Recommended Operation Conditions unless otherwise noted. Symbol Parameter Test Condition 6 7 75E Unit, Operating Current One bank active CL 3 BL 1 120 100 120 mA. tclk tclk min trc trc min, Idd2p Precharge Standby Current CKE Vil max tck 15ns 2 2 2 mA. In Power Down Mode, Idd2ps Precharge Standby Current CKE Vil max CLK Vil max 2 2 2 mA. In Power Down Mode, Idd2n 2 Precharge Standby Current CS Vdd 0 2V CKE Vih min 25 25 25 mA.
In Non Power Down Mode tck 15ns, Idd2ns Precharge Standby Current CS Vdd 0 2V CKE Vih min or 15 15 15 mA. In Non Power Down Mode CKE Vil max All inputs stable. Idd3n Active Standby Current,CS Vdd 0 2V CKE Vih min 40 40 40 mA. In Non Power Down Mode tck 15ns, Idd3ns Active Standby Current CS Vdd 0 2V CKE Vih min or 25 25 25 mA. In Non Power Down Mode CKE Vil max All inputs stable. Idd3p Active Standby Current CKE Vil max tck 15ns 6 6 6 mA. Power Down Mode, Idd3ps Active Standby Current CKE Vil max CLK Vil max 6 6 6 mA. Power Down Mode, Idd4 Operating Current All banks active BL 4 CL 3 150 100 150 mA.
tck tck min, Idd5 Auto Refresh Current trc trc min tclk tclk min 150 130 150 mA. Idd6 Self Refresh Current CKE 0 2V 2 2 2 mA, 1 Idd max is specified at the output open condition. 2 Input signals are changed one time during 30ns, DC ELECTRICAL CHARACTERISTICS 2 Recommended Operation Conditions unless otherwise noted. Symbol Parameter Test Condition Min Max Unit, Iil Input Leakage Current 0V Vin Vdd with pins other than 10 10 A. the tested pin at 0V, Iol Output Leakage Current Output is disabled 0V Vout Vdd 10 10 A.
Voh Output High Voltage Level Ioh 2mA 2 4 V,Vol Output Low Voltage Level Iol 2mA 0 4 V. Integrated Silicon Solution Inc www issi com 15,10 28 2015.

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logo, message or image (even a face!) into a delicious treat for your customers, vendors and employees. Packaging We provide unique gifting solutions for corporate clients. Add a ? nishing touch to your personal creation with our selection of trendy boxes, sleek tin and beautifully packed bags. Mars Incorporated, a family-owned business founded in 1911, is one of the largest food ...

Enviropaedia DirectoryOrderForm v10

Enviropaedia DirectoryOrderForm v10

Company logo Link to website FREE High Profile Networking Listing One year subscription 350 words description of activities Primary person contact details Secondary person contact details 8 Activity Icons 8 Associated Topics Company logo Link to Website 4 photos or illustrations of Company personnel or Company activities R1500.00 ? THESE DETAILS WILL BE DISPLAYED ON THE WEBSITE FOR PUBLIC ...